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Aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that such a comparison is made, crucial to pass this new technology to the semiconductor manufacturing standards. In particular, emission microscopy measurements and current measurements allowed us to conclude that optical trenches strongly improve the device performances. Copyright© 2012 IFSA.
Publication date: 
1 Mar 2012

Roberto Pagano, Sebania Libertino, Giusy Valvo, Alfio Russo, Delfo Nunzio Sanfilippo, Giovanni Condorelli, Clarice Di Martino, Beatrice Carbone, PG Fallica, Salvatore Lombardo

Biblio References: 
Volume: 14 Issue: 1 Pages: 151-159
Sensors & Transducers Journal