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Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures

Simone Milazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Leonardo Gervasi, Salvatore Mirabella, Ferdinando Iucolano, Fabrizio Roccaforte

2025-01-15

Biblio references: Volume: 679 Pages: 161316

Origin: Applied Surface Science

Two-dimensional electron gas isolation mechanism in Al0. 2Ga0. 8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

Antonino Scandurra, Paolo Ragonese, Cristiano Calabretta, Khadisha Zahra, Liam Soomary, Fabrizio Roccaforte, Giuseppe Greco, Nicolò Piluso, Maria Eloisa Castagna, Ferdinando Iucolano, Andrea Severino, Elena Bruno, Salvo Mirabella

2024-11-15

Biblio references: Volume: 674 Pages: 160885

Origin: Applied Surface Science

Unveiling strain-responsive topological landscapes in the Dirac semimetal

Paolo Settembri, Federico Mazzola, Ivana Vobornik, Jun Fujii, Maximilian Kögler, Chia-Nung Kuo, Chin Shan Lue, Antonio Politano, Gianni Profeta

2024-11-15

Biblio references: Volume: 110 Issue: 20 Pages: L201401

Origin: Physical Review B

Reduction and Quantum Confinement Effects in Graphene Oxide: Relevance for Electro-optical Applications

Damiano Ricciarelli, Simona Filice, Gaetano Calogero, Viviana Scuderi, Stefano Boscarino, Valentina Iacono, Francesco Ruffino, Ioannis Deretzis, Giuseppe Fisicaro, Silvia Scalese, Antonino La Magna

2024-10-30

Biblio references:

Origin: ACS Applied Nano Materials

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200 {\deg} C

P Fiorenza, F Cordiano, SM Alessandrino, A Russo, E Zanetti, M Saggio, C Bongiorno, F Giannazzo, F Roccaforte

2024-10-25

Biblio references:

Origin: arXiv preprint arXiv:2410.19545

Plasmon Response in Individual Conical Silicon Nanowires with Different Lengths

Rizwan Rafique, Antonino La Magna, Antonio Massimiliano Mio, Salvatore Patanè, Jost Adam, Rosaria Anna Puglisi

2024-10-23

Biblio references: Volume: 11 Issue: 11 Pages: 999

Origin: Photonics

Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation

Mouad Bikerouin, Anna Marzegalli, Davide Spirito, Gerald JK Schaffar, Corrado Bongiorno, Fabrizio Rovaris, Mohamed Zaghloul, Agnieszka Anna Corley-Wiciak, Antonio M Mio, Leo Miglio, Verena Maier-Kiener, Giovanni Capellini, Emilio Scalise

2024-10-10

Biblio references:

Origin: arXiv preprint arXiv:2410.08372

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte

2024-10-01

Biblio references: Volume: 14 Issue: 10

Origin: AIP Advances

Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys

Agnieszka Anna Corley-Wiciak, Omar Concepción, Marvin Hartwig Zoellner, Gianfranco Sfruncia, Florian Bärwolf, Giuseppe Nicotra, Detlev Grützmacher, Dan Buca, Giovanni Capellini, Davide Spirito

2024-10-01

Biblio references: Volume: 8 Issue: 10 Pages: 104601

Origin: Physical Review Materials

GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT

Cristiano Calabretta, Nicolo Piluso, Hyon Ju Chauveau, Emmanuel Roy, Cristophe Iatosti, Francesco La Via, Andrea Severino

2024-09-30

Biblio references: Volume: 362 Pages: 27-31

Origin: Solid State Phenomena

Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures

Two-dimensional electron gas isolation mechanism in Al0. 2Ga0. 8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

Unveiling strain-responsive topological landscapes in the Dirac semimetal

Reduction and Quantum Confinement Effects in Graphene Oxide: Relevance for Electro-optical Applications

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200 {\deg} C

Plasmon Response in Individual Conical Silicon Nanowires with Different Lengths

Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys

GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT

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