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Plasmon Response in Individual Conical Silicon Nanowires with Different Lengths

Rizwan Rafique, Antonino La Magna, Antonio Massimiliano Mio, Salvatore Patanè, Jost Adam, Rosaria Anna Puglisi

2024-10-23

Biblio references: Volume: 11 Issue: 11 Pages: 999

Origin: Photonics

Low-Temperature Sintering of Colloidal Gold Nanoparticles by Salt Addition

L Catanzaro, V Scardaci, M Scuderi, M Condorelli, L D’Urso, G Compagnini

2024-10-15

Biblio references: Pages: 1-6

Origin: Journal of Materials Engineering and Performance

Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation

Mouad Bikerouin, Anna Marzegalli, Davide Spirito, Gerald JK Schaffar, Corrado Bongiorno, Fabrizio Rovaris, Mohamed Zaghloul, Agnieszka Anna Corley-Wiciak, Antonio M Mio, Leo Miglio, Verena Maier-Kiener, Giovanni Capellini, Emilio Scalise

2024-10-10

Biblio references:

Origin: arXiv preprint arXiv:2410.08372

Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys

Agnieszka Anna Corley-Wiciak, Omar Concepción, Marvin Hartwig Zoellner, Gianfranco Sfruncia, Florian Bärwolf, Giuseppe Nicotra, Detlev Grützmacher, Dan Buca, Giovanni Capellini, Davide Spirito

2024-10-01

Biblio references: Volume: 8 Issue: 10 Pages: 104601

Origin: Physical Review Materials

Rydberg atomtronic devices

Philip Kitson, Tobias Haug, Antonino La Magna, Oliver Morsch, Luigi Amico

2024-10-01

Biblio references: Volume: 110 Issue: 4 Pages: 043304

Origin: Physical Review A

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte

2024-10-01

Biblio references: Volume: 14 Issue: 10

Origin: AIP Advances

GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT

Cristiano Calabretta, Nicolo Piluso, Hyon Ju Chauveau, Emmanuel Roy, Cristophe Iatosti, Francesco La Via, Andrea Severino

2024-09-30

Biblio references: Volume: 362 Pages: 27-31

Origin: Solid State Phenomena

Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films

Salvatore Ethan Panasci, Emanuela Schiliro, Marco Cannas, Simonpietro Agnello, Antal Koos, Miklos Nemeth, Béla Pécz, Fabrizio Roccaforte, Filippo Giannazzo

2024-09-30

Biblio references: Volume: 362 Pages: 7-12

Origin: Solid State Phenomena

The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale

Cedric Corley-Wiciak, Marvin Hartwig Zöllner, Agnieszka Anna Corley-Wiciak, Fabrizio Rovaris, Gianfranco Sfruncia, Giuseppe Nicotra, Ignati Zaitsev, Costanza Lucia Manganelli, Edoardo Zatterin, Davide Spirito, Anna Marzegalli, Tobias Schulli, Nils Von Den Driesch, Dan Buca, Francesco Montalenti, Carsten Richter, Giovanni Capellini

2024-09-27

Biblio references: Volume: 114 Issue: 2 Pages: 145

Origin: ECS Transactions

Analysis of Mechanical Properties of 4H-SiC 6 Inch Wafers by Nanoindentation Test

Brunella Cafra, Antonella Sciuto, Giuseppe D'Arrigo

2024-09-16

Biblio references: Volume: 8 Pages: 495-496

Origin: Scientific Books of Abstracts

Plasmon Response in Individual Conical Silicon Nanowires with Different Lengths

Low-Temperature Sintering of Colloidal Gold Nanoparticles by Salt Addition

Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation

Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys

Rydberg atomtronic devices

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT

Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films

The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale

Analysis of Mechanical Properties of 4H-SiC 6 Inch Wafers by Nanoindentation Test

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