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Type: 
Journal
Description: 
In this paper, we report on the growth of highly uniform MoS2 films, mostly consisting of monolayers, on SiC surfaces with different doping levels (n- SiC epitaxy, ~1016 cm-3, and n+ SiC substrate, ~1019 cm-3) by sulfurization of a pre-deposited ultra-thin MoOx films. MoS2 layers are lowly strained (~0.12% tensile strain) and highly p-type doped (≈4×1019 cm−3), due to MoO3 residues still present after the sulfurization process. Nanoscale resolution I-V analyses by conductive atomic force microscopy (C-AFM) show a strongly rectifying behavior for MoS2 junction with n- SiC, whereas the p+ MoS2/n+ SiC junction exhibits an enhanced reverse current and a negative differential behavior under forward bias. This latter observation, indicating the occurrence of band-to-band-tunneling from the occupied states of n+ SiC conduction band to the empty states of p+ MoS2 valence band, is a confirmation of the very …
Publisher: 
Trans Tech Publications Ltd
Publication date: 
30 Sep 2024
Authors: 

Salvatore Ethan Panasci, Emanuela Schiliro, Marco Cannas, Simonpietro Agnello, Antal Koos, Miklos Nemeth, Béla Pécz, Fabrizio Roccaforte, Filippo Giannazzo

Biblio References: 
Volume: 362 Pages: 7-12
Origin: 
Solid State Phenomena