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Power and High Frequencies Devices

Processing and characterizations for Silicon Carbide power devices

Owing to its superior electrical properties, such as a wide band gap (3.2 eV) and a high critical electric field (3MV/cm), Silicon Carbide (4H-SiC) is now considered the...

Gallium Nitride processing for high-power and high-frequency devices

Gallium Nitride (GaN) and its related AlxGa1-xN ternary alloys have excellent properties (like a wide band gap, a high critical electric field and a high electron saturation...

SiC growth and new applications

In the actual Power Devices market, 4H-SiC is the emerging material. The main limitations for an extensive application of this SiC polytype in many power applications are the cost of the material...

2D materials and their heterostructures with wide bandgap semiconductors for high frequency electronics

Graphene (Gr) has been widely investigated in the last years as channel material for high frequency electronics. However, the lack of a band gap in Gr band-structure hinders its application in...