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Damage evolution in Plasma Facing Materials by a sequential multiscale approach

G Lo Presti, A La Magna

2024-09-09

Biblio references: Volume: 64 Issue: 10 Pages: 106051

Origin: Nuclear Fusion

TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer

Cristiano Calabretta, Nicolo Piluso, Corrado Bongiorno, Simona Boninelli, Francesco La Via, Andrea Severino

2024-08-28

Biblio references: Volume: 359 Pages: 7-11

Origin: Solid State Phenomena

Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions

Alfio Mancuso, Simona Boninelli, Massimo Camarda, Patrick Fiorenza, Antonio Mio, Viviana Scuderi, Philippe Godignon, Sofia Aslanidou, Lucia Calcagno, Francesco La Via

2024-08-28

Biblio references: Volume: 359 Pages: 137-143

Origin: Solid State Phenomena

Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers

Paolo Badalà, Corrado Bongiorno, Patrick Fiorenza, Gabriele Bellocchi, Emanuele Smecca, Marilena Vivona, Marco Zignale, Maurizio Massimino, Ioannis Deretzis, Simone Rascunà, Marcello Frazzica, Massimo Boscaglia, Fabrizio Roccaforte, Antonino La Magna, Alessandra Alberti

2024-08-28

Biblio references: Volume: 359 Pages: 97-103

Origin: Solid State Phenomena

Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation

Maria Canino, Frank Torregrosa, Marcin Zielinski, Virginia Boldrini, Camilla Bidini, Manuela Russo, Piera Maccagnani, Francesco La Via

2024-08-28

Biblio references: Volume: 359 Pages: 1-6

Origin: Solid State Phenomena

Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Patrick Fiorenza, Marco Zignale, Edoardo Zanetti, Mario S Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

2024-08-27

Biblio references: Volume: 358 Pages: 45-49

Origin: Solid State Phenomena

Plasmonic Ag Nanoparticles on SiC for Use as SERS Substrate and in Integrated Optical Sensors for Bio-Chemical Applications

Valentina Cantaro, Antonella Sciuto, Antonio Brancato, Giuseppe Compagnini, Giuseppe D'Arrigo

2024-08-26

Biblio references: Volume: 984 Pages: 63-69

Origin: Key Engineering Materials

250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector Performances

Gabriele Trovato, Alessandro Meli, Annamaria Muoio, Riccardo Reitano, Lucia Calcagno, Matteo Hakeem Kushoro, Marica Rebai, Marco Tardocchi, Antonio Trotta, Miriam Parisi, Laura Meda, Francesco La Via

2024-08-26

Biblio references: Volume: 984 Pages: 35-40

Origin: Key Engineering Materials

Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on< 111> and< 100> Silicon

Sergio Sapienza, Luca Belsito, Matteo Ferri, Ivan Elmi, Marcin Zielinski, Francesco La Via, Alberto Roncaglia

2024-08-26

Biblio references: Volume: 984 Pages: 29-33

Origin: Key Engineering Materials

Stress Fields Distribution and Simulation in 3C-SiC Resonators

Viviana Scuderi, Annamaria Muoio, Sergio Sapienza, Matteo Ferri, Luca Belsito, Alberto Roncaglia, Francesco La Via

2024-08-26

Biblio references: Volume: 984 Pages: 41-45

Origin: Key Engineering Materials

Damage evolution in Plasma Facing Materials by a sequential multiscale approach

TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer

Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions

Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers

Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation

Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Plasmonic Ag Nanoparticles on SiC for Use as SERS Substrate and in Integrated Optical Sensors for Bio-Chemical Applications

250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector Performances

Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on< 111> and< 100> Silicon

Stress Fields Distribution and Simulation in 3C-SiC Resonators

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