The electrical properties of the interface between quasi free standing bilayer graphene (QFBLG) and SiC (0001) have been investigated by nanoscale resolution current measurements using conductive atomic force microscopy (CAFM). IV analyses were carried out on Au-capped QFBLG contacts with different sizes (from 200 down to 0.5 μm) fabricated on SiC samples with different miscut angles (from on-axis to 3.5 off-axis). The extracted QFBLG/SiC Schottky barrier height (SBH) was found to depend on the contact size. SBH values∼ 0.9-1 eV were obtained for large contacts, whereas a gradual increase was observed below a critical (micrometer scale) contact size (depending on the SiC miscut angle) up to values approaching∼ 1.5 eV. Nanoscale resolution current mapping on bare QFLBG contacts revealed that SiC step edges and facets represent preferential current paths causing the effective SBH lowering …