Helium and hydrogen implantations lead to the formation of extended defects that strongly interact with impurities like metal and dopants, affecting significantly their final profiles. Even if the efficiency of this metal gettering technique is widely demonstrated in literature, the high dose requirement can be a drawback for industrial applications. Dose reduction becomes then crucial. In the smartcut® process, it has been shown that helium and hydrogen co-implantation leads to the expected dose decrease. The same idea was then applied for the gettering technique, keeping co-implantation doses below exfoliation threshold.After evidencing the impact of the H addition on cavities, this paper will focus on boron interactions with He–H induced defects. For this purpose, uniformly high doped (1018 B cm−3) P-type wafers were used. He implantation at 40 keV for a dose of 5 or 1 × 1016 He+ cm−2 followed or not by …