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We characterized SnO2:F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO2:F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us to determine junction parameters as doping of p-type a-Si:H, built-in potential and depletion width for the heterojunction with the smallest diameters, demonstrating that for these samples the TCO effects can be neglected. We compared …
Publication date: 
1 Jan 2011

G Cannella, F Principato, M Foti, C Garozzo, S Lombardo

Biblio References: 
Volume: 3 Pages: 51-57
Energy Procedia