In this paper, we use three‐dimensional kinetic Monte Carlo simulations on superlattices to study the hetero‐polytypical growth of cubic silicon carbide polytype (3C‐SiC) on hexagonal 6H‐SiC step‐bunched substrates with miscuts towards the and directions. We find that the preferential 3C conversion observed on misoriented substrates could be due to a different step‐to‐island interaction which enhances island stability and expansion in this specific direction. For this reason 3‐4 degrees off step‐bunched 6H substrates with miscut towards the direction should be the best choice for the stable and reproducible hetero‐polytypical growth of high quality cubic epitaxial films. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)