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Type: 
Conference
Description: 
Silicon Carbide metal-oxide-semiconductor field effect transistor (4H-SiC MOSFET) can be considered as the next revolution in power electronics applications. However, a wide market introduction of 4H-SiC MOSFET requires a special focus on device reliability and simplicity of use to replace Silicon switches in existing applications. This paper describes STMicroelectronics (STM) approach to define methodology and design solutions able to guarantee the end-users and to drive their choice toward 4H-SiC MOSFET as an ideal power component.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2015
Authors: 

Mario Saggio, Alfio Guarnera, Edoardo Zanetti, Simone Rascunà, Alessia Frazzetto, Dario Salinas, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte

Biblio References: 
Volume: 821 Pages: 660-666
Origin: 
Materials Science Forum