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3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of the work is to study the effect of carbonization on differently oriented Si surfaces, experiencing a 200 C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysis are carried out to evaluate thickness, crystal orientations and defects of carbonized layers with respect to the time-dependence of the process and to the different orientations of the Si substrate. It will be shown that process-related defects are strictly correlated to the substrate orientation either for size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films are obtained with a low defect density.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2007

Andrea Severino, Corrado Bongiorno, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F Portuese, Gaetano Foti, Francesco La Via

Biblio References: 
Volume: 556 Pages: 171-174
Materials science forum