The knowledge of the temperature behavior of Ohmic contacts is an important issue to understand the device operation. This work reports an electrical characterization as a function of the temperature carried out on nickel silicide (Ni 2 Si) Ohmic contacts, used both for n-type and p-type implanted 4H-SiC layers. The temperature dependence of the specific contact resistance suggested that a thermionic field emission mechanism dominates the current transport for contacts on p-type material, whereas a current transport by tunneling is likely occurring in the contacts on n-type implanted SiC. Furthermore, from the temperature dependence of the electrical characteristics, the activation energies for Al and P dopants were determined, resulting of 145 meV and 35 meV, respectively. The thermal stability of the electrical parameters has been demonstrated upon a long-term (up to~ 100 hours) cycling in the temperature …