-A A +A
Type: 
Journal
Description: 
Studying the temperature dependence of the electrical properties of Ohmic contacts formed on ion-implanted SiC layers is fundamental to understand and to predict the behaviour of practical devices. This paper reports the electrical characterization, as a function of temperature, of Ni-based Ohmic contacts, simultaneously formed on both n-or p-type implanted 4H-SiC. A structural analysis showed the formation of the Ni 2 Si phase after an annealing leading to Ohmic behaviour. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism (TFE) dominates the current transport for contacts formed on p-type material, while a field emission (FE) is likely occurring in the contacts formed on n-type implanted SiC. The values of the barrier height were 0.75 eV on p-type material and 0.45 eV on n-type material. The thermal stability of the current transport mechanisms …
Publisher: 
IOP Publishing
Publication date: 
29 May 2014
Authors: 

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Biblio References: 
Volume: 29 Issue: 7 Pages: 075018
Origin: 
Semiconductor Science and Technology