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Type: 
Journal
Description: 
In this article we use a recently developed analytical stress theory to describe hetero-epitaxial growths, extending the analysis capability in case of extreme conditions of strongly nonlinear dependence of the local strain field and of the elastic properties (Young modulus) on the film thickness. We apply this extended theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100).
Publisher: 
Elsevier
Publication date: 
1 Nov 2012
Authors: 

Massimo Camarda, Ruggero Anzalone, Antonino La Magna, Francesco La Via

Biblio References: 
Volume: 522 Pages: 26-29
Origin: 
Thin Solid Films