The electrical characteristics of 4H–SiC Schottky diodes were performed in the temperature range 80–700 K, in order to determine the temperature dependence of the drift mobility. At room temperature, a value of 724 cm2/(V s) was found, which decreased to 48.6 cm2/(V s) at 700 K. In the temperature range 200–700 K, a dependence of the mobility as T−3 was determined, that can be correlated to the presence of material defects.