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Type: 
Journal
Description: 
We propose a novel method to monitor the carrier plasma distribution in a bipolar mode field effect transistor light modulator, using standard emission microscopy. Our bi-dimensional maps validate the theoretical predictions of plasma distribution as a function of the device bias. Dynamical measurements provide an experimental evidence of a frequency threshold in the electric field induced plasma distribution. Below 500 kHz generation/recombination processes while above drift phenomena allow the plasma localization in the device. An effective carrier lifetime /spl ges/2 /spl mu/s was extrapolated.
Publisher: 
IEEE
Publication date: 
24 Oct 2005
Biblio References: 
Volume: 52 Issue: 11 Pages: 2374-2378
Origin: 
IEEE transactions on electron devices