Type:
Conference
Description:
The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2> 0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2%) with respect to the standard process without HCl.
Publisher:
Trans Tech Publications Ltd
Publication date:
1 Jan 2005
Biblio References:
Volume: 483 Pages: 67-72
Origin:
Materials Science Forum