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Type: 
Journal
Description: 
Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n-and p-type SiC for vertical power MOS devices, obtained adding Al to a standard Ni contact, and a single-metal technology for ohmic and rectifying contacts in MESFETs, using Ti or Ni without post-deposition annealing.
Publisher: 
World Scientific
Publication date: 
25 Jul 2006
Authors: 
Biblio References: 
Volume: 1 Pages: 77
Origin: 
SiC Materials and Devices