Type:
Journal
Description:
Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n-and p-type SiC for vertical power MOS devices, obtained adding Al to a standard Ni contact, and a single-metal technology for ohmic and rectifying contacts in MESFETs, using Ti or Ni without post-deposition annealing.
Publisher:
World Scientific
Publication date:
25 Jul 2006
Biblio References:
Volume: 1 Pages: 77
Origin:
SiC Materials and Devices