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Type: 
Conference
Description: 
We show and discuss some general features of dielectric breakdown of ultra-thin gate oxides for CMOS. We discuss III-V devices with high-k/metal gate, and compare to more classical structures with silicon substrates, SiOxNy or high-k as gate dielectrics, and poly-Si or metal gate. A model of the breakdown growth dependence on voltage, temperature, oxide thickness, etc., is discussed and compared to data.
Publisher: 
IEEE
Publication date: 
19 Apr 2015
Authors: 

Felix Palumbo, Moshe Eizenberg, Salvatore Lombardo

Biblio References: 
Pages: 5A. 1.1-5A. 1.6
Origin: 
2015 IEEE International Reliability Physics Symposium