In the last few years silicon carbide (SiC) has emerged as a suitable material for the fabrication of ultraviolet light detectors due to lower leakage current, intrinsic visible blindness and mature process technology. In this paper we report on the electro-optical characteristics of continuous thin metal film Ni 2 Si/4H-SiC photodiodes with very low surface epilayer doping properly designed for ultraviolet (UV) sunlight monitoring.