In this paper we have studied the connection between crystal quality and electrical transport in 4H-SiC by simultaneous micro-photoluminescence (μPL) and photocurrent (PC) measurements. We have used a focused HeCd laser at 325 nm (ie above bandgap) to measure with a spatial resolution of few microns both the μPL spectra and the IV characteristics in 4H-SiC/Ni Schottky diodes. We found that the PC signal acquired along a defect can give information on its spatial distribution in depth. The minority carrier lifetime has been also estimated and its dependence on the emission wavelength has been determined for several stacking faults.