The surface morphology and the electrical activation of P+ implanted 4H-SiC were investigated with respect to annealing treatments that differ only for the heating rate. P+ implantation was carried out in lightly doped n-type epitaxial layers. The implantation temperature was 300 C. The computed P profile was 250 nm thick with a concentration of 1× 1020 cm-3. Two samples underwent annealing at 1400 C in argon with different constant ramp up rates equal to 0.05 C/s and 40 C/s. A third sample underwent an incoherent light Rapid Thermal Annealing (RTA) at 1100 C in argon before the annealing at 1400 C with the lower ramp rate. The ramp up of the RTA process is a few hundred degrees per second. Atomic Force Microscopy (AFM) micrographs pointed out that the surface roughness of the samples annealed at 1400 C increases with increasing heating rate and that the critical temperature for surface roughening …