In this study, a 6 inch 3C-SiC wafer has been grown and processed to realize an Al+-implanted layer underneath the film surface. The structural damaging has been carefully analyzed by X-Ray Diffraction (XRD) and micro-Raman spectroscopy. Raman analysis on a grazing angle polished film, after the implantation process, has been conducted and a spectral region (between 825 and 925 cm-1) has been identified as an interesting footprint of the crystal damaging. Thermal treatments on implanted samples at doses as low as 4x10 14 cm-2 have shown a capability of the 3C-SiC crystal structure to recover from damaging. Reciprocal space mapping on (004) 3C-SiC lattice points suggests a total recovery at an annealing temperature of 1350 C.