Article PreviewArticle PreviewArticle PreviewWe have developed a high-quality growth process for 3C-SiC on on-axis (111) Si substrates with the ultimate goal to demonstrate high quality and yield electronic and MEMS devices. A single-side polished 50 mm (111) Si wafer was loaded into a hot-wall SiC CVD reactor for growth. The 3C-SiC process was performed in two stages: carbonization in propane and hydrogen at 1135 C and 400 Torr followed by growth at 1380 C and 100 Torr. X-ray diffraction rocking curve analysis of the 3C-SiC (222) peak indicates a FWHM value of 219 arcsec. This is a very interesting result given that the film thickness was only 2 µm, thus indicating that the grown film is of very high quality compared with published literature values. X-ray polar figure mapping was performed and it was observed that the micro twin content was below the detection limit. Therefore TEM characterization …