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We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si: H photovoltaic (PV) cells deposited with pin configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency of 6% is obtained at 300 lux under F12 spectrum illumination.
IOP Publishing
Publication date: 
4 Oct 2011

Marina Foti, Giuseppe Cannella, Cosimo Gerardi, Silvestra Di Marco, Sebastiano Ravesi, Noemi Sparta, Stella Lo Verso, F Principato, Salvatore Coffa, Salvatore Lombardo

Biblio References: 
Volume: 41 Issue: 4 Pages: 15
ECS Transactions