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Type: 
Journal
Description: 
Electrostatic properties, quantum capacitance (Cq) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for comparative study, viz., graphene exfoliated and deposited on 4H-SiC(0 0 0 1)—DG, and graphene grown epitaxially on 4H-SiC(0 0 0 1)—EG. We observed a distinctly lower screening length (rscr) and Cq while wider variations in the LDOS for EG. Such differences are attributed to the peculiar interface between EG/4H-SiC(0 0 0 1), which is known to be more or less defective having the presence of positive charges.
Publisher: 
North-Holland
Publication date: 
1 Mar 2012
Authors: 

S Sonde, C Vecchio, F Giannazzo, Rositsa Yakimova, V Raineri, E Rimini

Biblio References: 
Volume: 44 Issue: 6 Pages: 993-996
Origin: 
Physica E: Low-dimensional Systems and Nanostructures