Chemical vapor deposition in the low pressure regime of a high quality 3C-SiC film on silicon (100)-oriented substrates was carried out using silane Formula, propane Formula, and hydrogen Formula as the silicon supply, carbon supply, and gas carrier, respectively. The resulting bow in the freestanding cantilever structures was evaluated by an optical profilometer, and the residual gradient stress Formula in the films was calculated to be approximately between 15 and 20 MPa, which is significantly lower than the previously reported 3C-SiC on Si films. Finite element simulations of the stress field in the cantilever have been carried out to separate the uniform contribution Formula, related to the SiC/Si interface, from the gradient one Formula, related to the defects present in the SiC epilayer.
The Electrochemical Society
1 Apr 2010
Volume: 157 Issue: 4 Pages: H438-H442
Journal of The Electrochemical Society