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Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might …
Nature Publishing Group
Publication date: 
1 Apr 2016

Valeria Bragaglia, Fabrizio Arciprete, Wei Zhang, Antonio Massimiliano Mio, Eugenio Zallo, Karthick Perumal, Alessandro Giussani, Stefano Cecchi, Jos Emiel Boschker, Henning Riechert, Stefania Privitera, Emanuele Rimini, Riccardo Mazzarello, Raffaella Calarco

Biblio References: 
Volume: 6 Pages: 23843
Scientific reports