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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewEpitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (eg [N]≈ 10 15 cm-3) SiC, and a specific contact resistance as low as ρ C= 5.9× 10-6 Ωcm 2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from CV analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from IV measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal …
Publisher: 
Trans Tech Publications
Publication date: 
1 Jan 2014
Authors: 

Filippo Giannazzo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger, Heiko B Weber

Biblio References: 
Volume: 778 Pages: 1142-1145
Origin: 
Materials Science Forum