The dependence between the carrier concentration and electrical mobility has been studied by micro-Raman spectroscopy in n-doped 3C–SiC films grown on (111) and (100) Silicon oriented substrates. Bulk mobility varies between 10 and 510 cm2 V−1 s−1 for a carrier concentration ranging between 1.6×1016 and 5.4×1018 cm−3. Local stacking variations observed on the (111) 3C–SiC surface lead to a worse crystal morphology compared to (100) 3C–SiC films resulting in a decrease in the average bulk mobility. Defects are thus accountable for the dependence between mobility and carrier concentration for different 3C–SiC orientations.
American Institute of Physics
4 Oct 2010
Volume: 97 Issue: 14 Pages: 142103
Applied Physics Letters