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Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Type: 
Journal
Description: 
Publisher: 
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date: 
1 Jan 2007
Authors: 

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Biblio References: 
Volume: 556557 Pages: 571-574
Origin: 
Materials Science Forum
Link: 
http://scholar.google.com/scholar?cluster=10783105750441271783&hl=en&oi=scholarr

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