Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

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Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2007

Authors:

Biblio References:

Volume: 556557 Pages: 571-574

Origin:

Materials Science Forum

Link:

Scientific Productions