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A simplified deposition model, involving both the description of the deposition and of the film morphology was adopted to quantitatively understand the experimental trends encountered in the epitaxial silicon carbide deposition in an industrial hot wall reactor. The attention was focused on the system involving chlorinated species because its really superior performances with respect the traditional silane/hydrocarbons process. The evolution of the crystalline structure (ie, from poly to single) and of the surface roughness can be understood by simply comparing two characteristic times, like those inherent the surface diffusion and the matter supply to the surface.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2007

Maurizio Masi, Alessandro Veneroni, Alessandro Fiorucci, Francesco La Via, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa

Biblio References: 
Volume: 556 Pages: 93-96
Materials science forum