Article PreviewArticle PreviewArticle PreviewDeep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 C a main level at Ec-0.43 eV (E1/E2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E1/E2 level is mainly responsible for the luminescence quenching after irradiation.