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Type: 
Journal
Description: 
We study the electronic properties of epitaxial graphene on the (3×3)-reconstructed SiC(0001¯) plane within the density functional theory. Our results show that the interface interaction is inherently weak. The first graphene layer above the substrate is almost planar and sp2-hybridized. The substrate's contribution in the low-energy electronic spectrum is present through (a) interface states deriving from SiC surface atoms with bands that disperse around the Dirac point, (b) a mild n-type doping, and (c) a ∼20 meV band-gap opening. Substrate interference is, therefore, an issue also in the case of graphene grown on the C-face of SiC.
Publisher: 
AIP
Publication date: 
4 Mar 2013
Biblio References: 
Volume: 102 Issue: 9 Pages: 093101
Origin: 
Applied Physics Letters