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Type: 
Journal
Description: 
Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs (Gr-FETs) can be used for flexible high frequency (RF) electronics or for high sensitivity chemical sensors. Miniaturized and flexible Gr-FET sensors would be highly advantageous for current sensors technology for in vivo and in situ applications. In this paper, we report a wafer-scale processing strategy to fabricate arrays of back-gated Gr-FETs on poly (ethylene naphthalate)(PEN) substrates. These devices present a large-area graphene channel fully exposed to the external environment, in order to be suitable for sensing applications, and the channel conductivity is efficiently modulated by a buried gate contact under a thin Al 2 O 3 insulating film. In order to be compatible with the use of the PEN substrate, optimized deposition conditions of the Al 2 O 3 film by plasma-enhanced atomic layer deposition (PE-ALD) at a low temperature (100 C) have been developed without any relevant degradation of the final dielectric performance.
Publisher: 
Beilstein-Institut
Publication date: 
20 Feb 2017
Authors: 

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Biblio References: 
Volume: 8 Issue: 1 Pages: 467-474
Origin: 
Beilstein journal of nanotechnology