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Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs (Gr-FETs) can be used for flexible high frequency (RF) electronics or for high sensitivity chemical sensors. Miniaturized and flexible Gr-FET sensors would be highly advantageous for current sensors technology for in vivo and in situ applications. In this paper, we report a wafer-scale processing strategy to fabricate arrays of back-gated Gr-FETs on poly (ethylene naphthalate)(PEN) substrates. These devices present a large-area graphene channel fully exposed to the external environment, in order to be suitable for sensing applications, and the channel conductivity is efficiently modulated by a buried gate contact under a thin Al 2 O 3 insulating film. In order to be compatible with the use of the PEN substrate, optimized deposition conditions of the Al 2 O 3 film by plasma-enhanced atomic layer deposition (PE-ALD) at a low temperature (100 C) have been developed without any relevant degradation of the final dielectric performance.
Publication date: 
20 Feb 2017

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Biblio References: 
Volume: 8 Issue: 1 Pages: 467-474
Beilstein journal of nanotechnology