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Type: 
Conference
Description: 
The electrical current-voltage (IV) and capacitance-voltage (CV) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010
Authors: 

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Biblio References: 
Volume: 156 Pages: 331-336
Origin: 
Solid State Phenomena