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Type: 
Journal
Description: 
The dark current behavior of the pixels forming the Si photomultiplier as a function of the applied overvoltage and operation temperature is studied. The data are modeled by assuming that dark current is caused by current pulses triggered by events of diffusion of single minority carriers injected from the peripheral boundaries of the active area depletion layer and by thermal emission of carriers from Shockley–Read–Hall defects in the active area depletion layer.
Publisher: 
IEEE
Publication date: 
7 Aug 2012
Authors: 

Roberto Pagano, Domenico Corso, Salvatore Lombardo, Giuseppina Valvo, Delfo Nunzio Sanfilippo, Giogio Fallica, Sebania Libertino

Biblio References: 
Volume: 59 Issue: 9 Pages: 2410-2416
Origin: 
IEEE transactions on electron devices