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Type: 
Patent
Description: 
A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the ...
Publisher: 
Publication date: 
17 Aug 2010
Authors: 

Giuseppe D'arrigo, Rosario Corrado Spinella, , Rosario Corrado Spinella

Biblio References: 
Origin: 
US7777285