In this work, memory devices integrating a double layer of silicon nanocrystals as trapping medium and a high-k HfAlO-based control dielectric are presented. We will show that the use of two stacked Si-nc layers significantly improves the memory window compared to the single Si-nc layer devices, without introducing dispersions on the charging dynamics. Then, we also evaluate the potentiality of hybrid Si-nc double layer/SiN layer charge trapping media. These devices show a good memory window and good retention (>3 V after 10 years) with small activation energy (0.35 eV up to 200degC), thus being promising for future high-temperature memory applications.