In the present work, we systematically studied the effect of the annealing temperature (from 1400 C to 1650 C) on the electrical activation of 4H-SiC implanted with multiple energy (from 40 to 550 keV) and medium dose (1× 1013 cm-2) Al ions. The evolution of the acceptors (NA) and compensating donors (ND) depth profiles was monitored by the combined use of scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). We demonstrated that the electrical activation of the implanted layer with increasing annealing temperature is the result of the increase in the acceptors concentration and of the decrease in the ND/NA ratio. Atomic force microscopy (AFM) morphological analyses indicated that the surface quality is preserved even after the 1650 C annealing process.