Article PreviewArticle PreviewArticle PreviewThe electrical properties of epitaxial graphene (EG) grown on 8 off-axis 4H-SiC (0001) by annealing at 1600 C in inert gas ambient (Ar) were studied. The sheet resistance of the EG layers (R sh= 740±50Ω/sq) and the specific contact resistance of Ni contacts to EG (ρ c≈ 6x10-5 Ωcm 2) were evaluated on micrometer scale by measurements on transmission line model (TLM) structures. Si 3 N 4 was evaluated as a gate dielectric, showing excellent coverage to EG and a limited effect on its conductivity. The high n-type doping (~ 10 13 cm-2) of EG, as well as the field effect mobility (μ) dependence on n were determined using top gated field effect transistors (FETs) with Si 3 N 4 gate dielectric. Electron mean free path (l loc) and mobility (μ loc) were also locally determined, on submicrometer scale, by scanning probe microscopy, showing a broad distribution of μ loc values …