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We present the realization of hybrid silicon core/silicon nitride shell nanodots by Low Pressure Chemical Vapor Deposition (LPCVD) and their application as floating gate in Non Volatile Memory (NVM) devices. The LPCVD process includes three steps: nucleation using SiH4, selective growth of the silicon nuclei using SiH2Cl2 and finally selective growth of silicon nitride using a mixture of SiH2Cl2 and NH3 around the silicon dot. The two first steps have already been described in literature. We will therefore focus on the selective growth of a nitride layer on silicon dots. Morphological characterization using Scanning Electron Microscopy (SEM) allows control over dots size – 5 to 10nm – and density – up to 1E12/cm2. High Resolution Transmission Electron Microscopy (HRTEM) shows a crystalline silicon core and an outer shell of amorphous silicon nitride. Energy Filtered TEM pictures confirm that the nitride layer is …
Cambridge University Press
Publication date: 
1 Jan 2008

Jean Philippe Colonna, Gabriel Molas, Marc W Gely, Marc Bocquet, Eric Jalaguier, Barbara De Slavo, Helen Grampeix, Pierre Brianceau, Karim Yckache, Anne-Marie Papon, Geoffroy Auvert, Corrado Bongiorno, Salvatore Lombardo

Biblio References: 
Volume: 1071
MRS Online Proceedings Library Archive