Ni-silicide/silicon Schottky contacts have been realised by promoting low-temperature Ni–Si interdiffusion during deposition (~ 50 C) and reaction (450 C) on an oxygen-free  silicon surface. A 14 nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (~ 200 nm in diameter). The current–voltage (I–V) characteristics (340–80 K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by Δ≈ 0.1 eV. They have been associated with the core regions of the trans-domains (wherein the silicide lattice is epitaxially aligned to that of Si) since their density (~ 2.5× 10 9 cm-2) and dimension (~ 10 nm) fit the I–V curves vs temperature following the Tung's approach.
27 Oct 2011
Volume: 4 Issue: 11 Pages: 115701
Applied Physics Express