Cubic (111)-oriented silicon carbide (3C-SiC) heteroepitaxy on (110) silicon substrate was performed by low pressure chemical vapor deposition. A comparison with the previous work by Nishiguchi et al. [Appl. Phy. Lett. 84, 3082 (2004)] shows that the relationship (110)Si∥(111) 3C-SiC could be misleading. Based on x-ray diffraction pole figures and numerical simulations, we prove that this relationship is due to the formation of second order twins during the initial stages of growth. This analysis also reveals that the crystal starts to grow with a misalignment of 3.5° along the ⟨002⟩ Si direction to adapt the mismatch of lattice parameters.