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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewUsing joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of 4H Silicon Carbide we study the transition between monocrystalline and polycrystalline growth in terms of misorientation cut, growth rate and temperature. We compare these optimally calibrated results both with previous continuous models and literature data. We demonstrate that this study was, indeed, necessary to correctly reformulate the phase diagram of the transition.
Publisher: 
Trans Tech Publications
Publication date: 
1 Jan 2009
Authors: 

Massimo Camarda, Antonino La Magna, Francesco La Via

Biblio References: 
Volume: 615 Pages: 73-76
Origin: 
Materials Science Forum