Group III nitride semiconductors (III-N), including GaN, AlN, InN, and their alloys, are currently the materials of choice for many applications in optoelectronics (light-emitting diodes, laser diodes), and high-power and high-frequency transistors. Due to its attractive electrical, optical, mechanical, and thermal properties, graphene (Gr) integration with III-N technology has been considered in the last few years, in order to address some of the major issues which still limit the performances of GaN-based devices. To date, most of the ...