3C-SiC shows encouraging physical properties for the development of low cost high power compatible silicon based technology. The fundamental capability of grown 3C-SiC on silicon substrates leads to the possibility of a full integration of Si based process technologies. This is the driving force for the efforts for development a high quality heteroepitaxial film. The fundamental issue is the reduction of defects and stress due to the lattice mismatch between the 3C-SiC epilayer and the Silicon substrate. In this paper we show a way to reduce macroscopic structural features and to enhance the material quality and the surface quality by simply using a process based on a multilayer (ML) buffer structure with n++ and n doping alternation. This process leads to an evident improvement of both surface roughness, morphology and crystal quality.