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Type: 
Journal
Description: 
Short channel effects have been investigated in n-channel polysilicon thin film transistors. Transconductance degradation has been observed when reducing the channel length L and this effect has been explained with the presence of a parasitic resistance related to residual implant damage. Threshold voltage slighlty decreases for channel length around L=1 μm and simulations confirm that the roll-off of the threshold voltage is expected for L
Publisher: 
Elsevier
Publication date: 
1 Sep 2005
Authors: 

G Fortunato, A Valletta, P Gaucci, L Mariucci, SD Brotherton

Biblio References: 
Volume: 487 Issue: 1-2 Pages: 221-226
Origin: 
Thin solid films