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We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.
American Institute of Physics
Publication date: 
17 Sep 2012

S Lombardo, C Tringali, G Cannella, A Battaglia, M Foti, N Costa, F Principato, C Gerardi

Biblio References: 
Volume: 101 Issue: 12 Pages: 123902
Applied Physics Letters